Volume 7, Issue 1, June 2020, Page: 1-5
Kinetics of Generation of Thermal Donors in Silicon of Stabilization of States of Fast-Diffusing Impurities
Shoikrom Askarov, Department of Physics, Faculty of Mechanics, Tashkent State Technical University, Tashkent, Uzbekistan
Bashirulla Sharipov, Department of Physics, Faculty of Mechanics, Tashkent State Technical University, Tashkent, Uzbekistan
Shokhista Saliyeva, Department of Physics, Faculty of Mechanics, Tashkent State Technical University, Tashkent, Uzbekistan
Abdulaziz Mavlyanov, Laboratory of Mining, Uzbek-Japan Innovation Centre of Youth, Tashkent State Technical University, Tashkent, Uzbekistan
Solizhon Srazev, Department of Condensed Matter Physics, Faculty of Physics, Samarqand State University, Samarqand, Uzbekistan
Tuchi Toshboev, Department of Condensed Matter Physics, Faculty of Physics, Samarqand State University, Samarqand, Uzbekistan
Received: Jun. 3, 2019;       Accepted: Aug. 13, 2019;       Published: Jan. 8, 2020
DOI: 10.11648/j.ajae.20200701.11      View  229      Downloads  79
Abstract
The paper reports that the intensity of generation and the concentration of low-temperature thermal donors (LTD) at 450°C in silicon, where fast diffusing impurities (FDI) are stabilized by means of binding them into electrically neutral chemically bound complexes with sulfur, are significantly lower compared to their intensity and concentration in reference samples of silicon doped with sulfur and pure reference samples. The “Kaiser model” states that the initial rate of generation of low-temperature thermal donors is proportional to biquadrate, and their maximum concentration is to the third degree of oxygen concentration. According to the Kaiser model of thermal donor generation, LTD represent predominantly stable tetrahedrons (i.e. SiO4 molecules). However, the Kaiser model does not take into account the possibility of interaction of oxygen with other impurities that might lead to the formation of electrically active centers. Based on the analysis of experimental results of Si<S> samples subjected to heat treatment the authors recommend a revision of the principles of LTD in silicon in view of behavior of FDI, as they play a key role in the process of the formation of LTD. Thus, in the present paper the authors effectively are attempting to shed light on the anticipated role of impurity centers with deep levels in the process of formation of thermal donors.
Keywords
Silicon, Oxygen, Sulfur, Thermal Donors (LTD), Fast Diffusing Impurities (FDI), Electrically Neutral Chemically Bound Molecules
To cite this article
Shoikrom Askarov, Bashirulla Sharipov, Shokhista Saliyeva, Abdulaziz Mavlyanov, Solizhon Srazev, Tuchi Toshboev, Kinetics of Generation of Thermal Donors in Silicon of Stabilization of States of Fast-Diffusing Impurities, American Journal of Aerospace Engineering. Vol. 7, No. 1, 2020, pp. 1-5. doi: 10.11648/j.ajae.20200701.11
Copyright
Copyright © 2020 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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